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| Rev. 2.1 BSP297 SIPMOS O Small-Signal-Transistor Feature * N-Channel * Enhancement mode * Logic Level * dv/dt rated Product Summary VDS RDS(on) ID 200 1.8 0.66 PG-SOT223 4 V W A * Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 3 2 1 VPS05163 Type BSP297 Pb-free Yes Package PG-SOT223 Tape and Reel Information L6327: 1000 pcs/reel Marking BSP297 Packaging Non dry Maximum Ratings, at Tj = 25 C, unless otherwise specified Symbol Parameter Continuous drain current TA=25C TA=70C Value 0.66 0.53 Unit A ID Pulsed drain current TA=25C ID puls dv/dt VGS Ptot Tj , Tstg 2.64 6 20 1B (>500V, <1000V) 1.8 -55... +150 55/150/56 W C kV/s V Reverse diode dv/dt IS=0.66A, V DS=160V, di/dt=200A/s, Tjmax=150C Gate source voltage ESD (JESD22-A114-HBM) Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2009-08-18 Rev. 2.1 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) BSP297 Symbol min. RthJS RthJA 80 48 115 70 Values typ. 15 max. 25 K/W Unit Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0, ID=250A Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 200 0.8 Values typ. 1.4 max. 1.8 Unit V Gate threshold voltage, VGS = VDS ID=400A Zero gate voltage drain current V DS=200V, VGS=0, Tj=25C V DS=200V, VGS=0, Tj=150C A 10 1 1.2 1 0.1 100 10 3 1.8 nA W Gate-source leakage current V GS=20V, VDS=0 Drain-source on-state resistance V GS=4.5V, ID=0.53A Drain-source on-state resistance V GS=10V, ID=0.66A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2009-08-18 Rev. 2.1 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr V GS=0, IF = I S V R=100V, IF=lS, di F/dt=100A/s BSP297 Values min. typ. 0.94 286 38 15.7 5.2 3.8 49 19 max. 357 47 23.5 7.8 5.7 74 29 ns S pF Unit Symbol Conditions g fs Ciss Coss Crss td(on) tr td(off) tf Q gs Q gd Qg V DS2*I D*RDS(on)max, ID=0.53A V GS=0, VDS=25V, f=1MHz 0.47 - V DD=100V, V GS=4.5V, ID=0.6A, RG=15W V DD=160V, ID=0.66A - 0.7 5.2 12.9 2.7 0.9 7.8 16.1 3.3 nC V DD=160V, ID=0.66A, V GS=0 to 10V V(plateau) V DD=160V, ID = 0.66 A IS V TA=25C - 0.84 52 80 0.66 2.64 1.2 78 120 A V ns nC Page 3 2009-08-18 Rev. 2.1 1 Power dissipation Ptot = f (TA) 1.9 BSP297 BSP297 2 Drain current ID = f (TA) parameter: V GS 10 V 0.75 BSP297 W 1.6 A 0.6 1.4 0.55 0.5 Ptot ID C 1.2 1 0.8 0.6 0.4 0.2 0 0 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 20 40 60 80 100 120 160 0 0 20 40 60 80 100 120 C 160 TA TA 3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TA = 25 C 10 1 BSP297 4 Transient thermal impedance ZthJA = f (tp) parameter : D = t p/T 10 2 tp = 100.0s BSP297 A /I D VD S K/W 10 0 1 ms 10 -1 10 ms ZthJA 10 0 R ( DS on ) = 10 1 ID D = 0.50 0.20 0.10 0.05 0.02 0.01 10 -2 DC 10 -1 single pulse 10 -3 0 10 10 1 10 2 V 10 3 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS Page 4 tp 2009-08-18 Rev. 2.1 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 C, VGS 1.3 BSP297 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 C, VGS 2.6V W 2.8V 3.4V 3.8V 3.5 4V 4.6V 5V 3 6V 10V 2.5 4.5 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.4 0.8 1.2 1.6 2.8V 2.6V RDS(on) 3.4V 3.8V 4V 1.1 4.6V 1 5V 6V 0.9 10V A ID 2 1.5 1 0.5 0 0 V 2.2 0.2 0.4 0.6 0.8 1 A 1.3 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: Tj = 25 C 1.3 8 Typ. forward transconductance g fs = f(ID) parameter: Tj = 25 C 1.4 A 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 S 1.2 1.1 1 g fs V ID 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 3.5 0 0 0.2 0.4 0.6 0.8 1 A 1.3 VGS Page 5 ID 2009-08-18 Rev. 2.1 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 0.66 A, VGS = 10 V 8.5 BSP297 BSP297 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: V GS = VDS; ID =400A 2.2 W 7 V 98% 1.8 RDS(on) 6 5 4 3 98% 2 1 0 -60 typ VGS(th) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 2% typ. -20 20 60 100 C 180 0 -60 -20 20 60 100 C 160 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: V GS=0, f=1 MHz, Tj = 25 C 10 3 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj 10 1 BSP297 A pF Ciss 10 0 C 10 2 Coss IF 10 -1 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 5 10 15 20 V 30 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS VSD Page 6 2009-08-18 Rev. 2.1 13 Typ. gate charge VGS = f (QG ); parameter: VDS , ID = 0.66 A pulsed, Tj = 25 C 16 V BSP297 BSP297 14 Drain-source breakdown voltage V(BR)DSS = f (Tj) 245 BSP297 V 235 12 V(BR)DSS 0.5 VDS max 230 225 220 215 210 205 200 VGS 10 8 0.2 VDS max 6 0.8 V DS max 4 195 190 185 2 0 0 2 4 6 8 10 12 14 16 nC 20 180 -60 -20 20 60 100 C 180 QG Tj Page 7 2000-08-18 Rev. 2.1 BSP297 Page 8 2009-08-18 |
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